2018 旭硝子財団 助成研究発表会 要旨集

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CsW2O6Cs+ 2Ta4SiTe4SP = S2/[1]Ta4SiTe4100-200 K2 mcm400 V K180 W cm1K22TaMo220-280 K170 W cm1K2 3. CsW2O6 Ta4SiTe4mm 4. [1] T. Inohara, Y. Okamoto, Y. Yamakawa, A. Yamakage, and K. Takenaka, Appl. Phys. Lett. 110, 183901 (2017). 5. e-mail: yokamoto@nuap.nagoya-u.ac.jp 100101102103104105 (m cm)CsW2O6single crystalCsW2O6sintered sample(a)-400-2000S (μV K-1)CsW2O6single crystalCsW2O6sintered samples(b)151050 (mW cm-1 K-1)3002001000T (K)Ca2Ta2O6FCsW2O6single crystalCsW2O6sintered samples(c)single crystalW5.5+Cs+12840 (m cm)-600-400-2000S (μV K-1)Ta4SiTe4 whisker(a)2001000P (μW cm-1K-2)2001000T (K)(b)300nondopeMo 0.1%Mo 1%Mo 2%－27－